1
Subject to change without notice.
www.cree.com/rf
CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40180PP, operating
from a 28 volt rail, offers a general purpose, broadband solution to
a variety of RF and microwave applications. GaN HEMTs offer high
effciency, high gain and wide bandwidth capabilities making the
CGH40180PP ideal for linear and compressed amplifer circuits.
The transistor is available in a 4-lead fange package.
R
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v
2
.
0
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O
c
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o
b
e
r
2
0
1
3
Package Types: 440199
PN: CGH40180PP
FEATURES
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Up to 2.5 GHz Operation
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20 dB Small Signal Gain at 1.0 GHz
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15 dB Small Signal Gain at 2.0 GHz
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220 W typical PSAT
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70 % Effciency at PSAT
?
28 V Operation
APPLICATIONS
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2-Way Private Radio
?
Broadband Amplifers
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Cellular Infrastructure
?
Test Instrumentation
?
Class A, AB, Linear amplifers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
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